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| 2SK1519, 2SK1520 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1519, 2SK1520 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1519 2SK1520 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 30 30 120 30 200 150 -55 to +150 Unit V V A A A W C C 2 2SK1519, 2SK1520 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min 2SK1519 V(BR)DSS 2SK1520 V(BR)GSS IGSS 450 500 30 -- -- -- -- -- -- 10 250 V A A V S pF pF pF ns ns ns ns V ns IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 100 A/s ID = 15 A, VGS = 10 V, RL = 2 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 15 -- -- -- -- -- -- -- -- -- -- 0.11 0.12 25 5800 1550 170 65 170 415 200 1.1 120 3.0 0.15 0.16 -- -- -- -- -- -- -- -- -- -- ID = 15 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1519 IDSS 2SK1520 Gate to source cutoff voltage ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V * 1 Static Drain to source 2SK1519 RDS(on) on state resistance 2SK1520 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test 3 2SK1519, 2SK1520 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) Maximum Safe Operation Area 1,000 300 Drain Current ID (A) 100 30 10 3 1 0.3 Ta = 25C 0.1 200 100 rea sa 10 thi S (on) n 10 s ni yRD 0 tio b PW s era ed 1 m = Op limit DC 10 s is Op ms er (1 ati Sh on ot) (T C= 25 C ) 2SK1519 2SK1520 0 50 100 Case Temperature TC (C) 150 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 6V 10 V 40 Drain Current ID (A) Drain Current ID (A) Typical Transfer Characteristics 50 VDS = 10 V Pulse Test 40 Pulse Test 5V 30 4.5 V 20 30 20 TC = 75C 25C -25C 10 VGS = 4 V 10 0 16 8 4 12 Drain to Source Voltage VDS (V) 20 0 2 6 8 4 Gate to Source Voltage VGS (V) 10 4 2SK1519, 2SK1520 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () 10 Pulse Test 8 ID = 50 A 5 Pulse Test 2 1 0.5 6 4 20 A 2 10 A 0.2 0.1 0.05 2 5 50 100 20 10 Drain Current ID (A) 200 VGS = 10 V, 15 V 0 2 6 8 4 Gate to Source Voltage VGS (V) 10 Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 100 50 VDS = 10 V Pulse Test TC = -25C 25C 75C 0.5 VGS = 10 V Pulse Test ID = 50 A 0.3 20 A 0.4 20 10 5 0.2 10 A 0.1 2 1 0.5 0 -40 0 80 120 40 Case Temperature TC (C) 160 1 2 10 5 20 Drain Current ID (A) 50 5 2SK1519, 2SK1520 Body to Drain Diode Reverse Recovery Time 1,000 Reverse Recovery Time t rr (ns) Typical Capacitance vs. Drain to Source Voltage 10,000 Ciss 500 di/dt = 100 A/s, VGS = 0 Pulse Test Capacitance C (pF) 200 100 50 1,000 Coss 100 Crss VGS = 0 f = 1 MHz 10 20 10 0.5 1 10 2 5 20 Reverse Drain Current IDR (A) 50 0 10 30 40 20 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1,000 20 Switching Characteristics 1,000 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Switching Time t (ns) 800 VDD = 100 V 250 V 400 V VGS VDS 500 tf tr td (off) 16 200 100 50 600 12 td (on) 400 8 200 VDD = 400 V 250 V 100 V ID = 30 A Pulse Test 400 4 20 10 0.5 VGS = 10 V, PW = 2 s . duty < 1%, VDD = 30 V . 1 2 5 10 20 Drain Current ID (A) 50 0 0 80 240 320 160 Gate Charge Qg (nc) 6 2SK1519, 2SK1520 Reverse Drain Current vs. Sourse to Drain Voltage 50 Reverse Dratin Current IDR (A) Pulse Test 40 30 20 10 VGS = 0, -5 V 10 V 0 0 0.4 0.8 1.6 2.0 1.2 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1 D=1 0.5 0.3 0.2 0.1 0.05 0.1 ch-c (t) = S (t) * ch-c ch-c = 0.625C/W, TC = 25C PDM PW D = PW T 0.02 0.03 0.01 ulse ot P 1 Sh T 100 1m 10 m Pulse Width PW (s) 100 m 0.01 10 1 10 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T RL 50 Vin 10 V VDD . = 30 V . td (on) Vout Vin 10% 10% 90% tr 90% td (off) 10% tf 7 2SK1519, 2SK1520 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 8 |
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